Techniques for mram mtj top electrode to metal layer interface including spacer

ABSTRACT

Some embodiments relate to an integrated circuit including a magnetoresistive random-access memory (MRAM) cell. The integrated circuit includes a lower metal layer and an upper metal layer disposed over the lower metal layer. A bottom electrode is disposed over and in electrical contact with the lower metal layer. A magnetic tunneling junction (MTJ) is disposed over an upper surface of bottom electrode. A top electrode is disposed over an upper surface of the MTJ and is in contact with the upper metal layer. A sidewall spacer surrounds an outer periphery of the top electrode. An etch stop layer is disposed on top of an outer periphery of the spacer top surface and surrounding an outer periphery of the bottom surface of the upper metal layer. The etch stop layer overhangs the outer periphery of the spacer top surface.

BACKGROUND

Many modern day electronic devices contain electronic memory. Electronicmemory may be volatile memory or non-volatile memory. Non-volatilememory is able to retain its stored data in the absence of power,whereas volatile memory loses its stored data when power is lost.Magnetoresistive random-access memory (MRAM) is one promising candidatefor next generation non-volatile electronic memory due to advantagesover current electronic memory. Compared to current non-volatile memory,such as flash random-access memory, MRAM typically is faster and hasbetter endurance. Compared to current volatile memory, such as dynamicrandom-access memory (DRAM) and static random-access memory (SRAM), MRAMtypically has similar performance and density, but lower powerconsumption.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A illustrates a cross-sectional view of a portion of an electronicmemory including some embodiments of an MRAM cell, including a magnetictunneling junction (MTJ).

FIG. 1B illustrates a cross-sectional view of an MRAM cell illustratinga geometry of a stop layer deposited during manufacture of the MRAMcell.

FIG. 1C illustrates a cross-sectional view of an MRAM cell exhibiting anundesired overflow of metal.

FIG. 2 illustrates a cross-sectional view of some embodiments of anintegrated circuit including MRAM cells.

FIG. 3 illustrates a top view of some embodiments of FIG. 2's integratedcircuit including MRAM cells.

FIG. 4 illustrates an enlarged cross-sectional view an MRAM cell of FIG.2's integrated circuit.

FIGS. 5 through 11 illustrate a series of incremental manufacturingsteps as a series of cross-sectional views.

FIG. 12 illustrates a methodology in flowchart format that illustratessome embodiments of the present concept.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A magnetoresistive random-access memory (MRAM) cell includes upper andlower electrodes, and a magnetic tunnel junction (MTJ) arranged betweenthe upper and lower electrodes. In conventional MRAM cells, the upperelectrode is coupled to an overlying metal layer (e.g., metal 1, metal2, metal 3, etc.) by a contact or via. Although use of this couplingcontact or via is widely adopted, the overall height of this MRAM cellplus this contact or via thereover is large relative to typical verticalspacing between adjacent metal layers (e.g., between a metal 2 layer anda metal 3 layer). To make this height more in line with the verticalspacing between adjacent metal layers, the present disclosure providesfor techniques to couple the top electrode directly to an overlyingmetal line without a via or contact there between while avoidingpossible MRAM shorting due to metal line overflow beyond a top surfaceof the MRAM cell and a bottom electrode of the MRAM cell.

Referring to FIG. 1A, a cross-sectional view of a portion of a memorydevice 100 that includes a memory array region and a periphery region.The memory region includes a metal layer-to-metal layer connectionarrangement 103 for an MRAM cell 101 in accordance with someembodiments. Two MRAM cells 100 (cell 1 and cell 2) are illustrated,though like reference numerals are used to describe the MRAM cells 101for convenience. The MRAM cells 101 include a bottom electrode 102 and atop electrode 104, which are separated from one another by a magnetictunnel junction (MTJ) 106. In some embodiments, the bottom electrode 102employs a multilayer structure (e.g., three layers) including a barrierlayer of tantalum nitride or tantalum and two other layers of tantalumnitride or titanium nitride. The top electrode 104, the MTJ 106, andpart of the bottom electrode 102 are surrounded by a sidewall spacer126. The bottom and top electrodes 102, 104 are disposed between a lowermetal layer 114 and an upper metal layer 116. The sidewall spacer 126 issurrounded by a protective layer 125, which can for example be made ofsilicon oxynitride (e.g., SiON), and a dielectric material such as aninterlayer dielectric (ILD) or intermetal dielectric (IMD) layer 128surrounds the protective layer 125. A dielectric liner 138, such as asilicon dioxide liner or silicon nitride liner, can conformally overliea dielectric-protection layer 140. The dielectric-protection layer 140electrically isolates the bottom electrode 102 from other activecircuits and provides mechanical and chemical protection to the bottomelectrode. In some embodiments the dielectric-protection layer is madeof silicon dioxide (SiO₂) or silicon nitride (Si₃O₄).

The MTJ 106 includes a lower ferromagnetic electrode 108 and an upperferromagnetic electrode 110, which are separated from one another by atunneling barrier layer 112. In some embodiments, the lowerferromagnetic electrode 108 can have a fixed or “pinned” magneticorientation, while the upper ferromagnetic electrode 110 has a variableor “free” magnetic orientation, which can be switched between two ormore distinct magnetic polarities that each represents a different datastate, such as a different binary state. In other implementations,however, the MTJ 106 can be vertically “flipped”, such that the lowerferromagnetic electrode 108 has a “free” magnetic orientation, while theupper ferromagnetic electrode 110 has a “pinned” magnetic orientation.

In some embodiments, the sidewall spacer 126 includes a top spacersurface 126 a which is at approximately the same height as a topelectrode surface 104 a of the top electrode 104. A portion of an etchstop layer 142 a remains disposed atop the spacer top surface 126 a andaround an outer periphery of the upper metal layer 116. The etch stoplayer 142 a has a width d1 which is one factor that defines the width d2of a bottom surface of the upper metal layer 116. The width d1 of theetch stop layer 142 a is in part controlled by a width of the spacer topsurface 126 a, which supports the etch stop layer 142 a when it isdeposited. A lower portion of the etch stop layer 142 b can be seenextending outward from a bottom of the sidewall spacer 126.

FIG. 1B illustrates schematically how the width of the spacer topsurface 126 a controls the width of the etch stop layer 142 a in an MRAMcell 150 in some embodiments. The etch stop layer 142 a′, 142 b′ can bemade of silicon carbide (SiC) in some embodiments. The upper portion ofthe etch stop layer 142 a′ can include a central region directly over(and in some cases in direct contact with) the upper electrode 104, anda peripheral region that tapers or slants downward over the spacer 126.It can be seen that the etch stop layer 142 a′ extends slightly beyondthe edges of the sidewall spacer 126. The etch stop layer 142 a′ has a“beret” like shape in that the etch stop layer includes a lateralextension that overhangs the spacer 126 to a significant degree. Theportion of the etch stop layer 142 a′ that extends beyond the outerperiphery of the spacer top surface angles slightly down toward thebottom metal layer. For the purposes of this description the term“overhanging etch stop layer” will be used as a shorthand to describe aberet shaped etch stop layer configured as shown in FIG. 1B. Theoverhanging etch stop layer 142 a′ may prevent unintentional etching ofthe protective layer 125 in a region that extends beyond an outerperiphery of the sidewall spacer 126. When the etch stop layer 142 a′ isetched to form an opening for an upper metal layer, the opening will notextend beyond the etch stop layer 142, thereby containing the uppermetal layer within the opening and confining the upper metal layer tothe region above the MRAM cell as can be seen in FIG. 1A.

In some MRAM fabrication processes, a titanium/titanium nitride layer isdeposited on top of the top electrode 104 to prevent oxidation duringmanufacturing. This titanium/titanium nitride layer is removed by asubsequent photo/etch step. An advantage to depositing the stop layer142 a′ on top of the top electrode 104 is that the complete coverage ofthe stop layer 142 a′ over the top electrode 104 may serve as sufficientoxidation prevention and thus may make the titanium/titanium nitridelayer unnecessary. Accordingly, the use of the etch stop layer 142 a′ toprevent oxidation instead of the titanium/titanium nitride layer cansave processing steps and cost.

FIG. 1C illustrates an example MRAM cell 160 that exhibits one potentialdifficulty presented by having direct contact between the top electrode104′ and the overlying metal layer 116′ without a sufficiently widesidewall spacer or stop layer. Sidewall spacer 126′ is narrower than thesidewall spacer 126 of FIG. 1B. This means that the etch stop layer 142a″ lacks lateral coverage (e.g., width) and may not provide sufficientprotection against unintentional etching of the protective layer 125. Itis possible that during etching to form the opening for the overlyingmetal layer 116′ an unintended cavity may be formed if the etch extendsslightly beyond the sidewall spacer 126′. If this cavity is filled withthe overlying metal layer, a “tooth” 116 x is formed and a weak pointmay be created (indicated by dashed arrow labeled X) that presents thepossibility of a short between the tooth 116 x and a bottom electrode102′ of the MRAM cell 160.

Returning to FIG. 1A, the MRAM cells 100 include a wider sidewall spacer126 and etch stop layer 142 a having sufficient width so that theconnection between the metal layer 116 and the MRAM cell 100 will notextend beyond the top surface 126 a of the sidewall spacer 126. Thismeans that the risk of a short developing between the bottom electrode102 and the overlying metal layer 116 is reduced. As will beappreciated, the features of FIG. 1A may provide reduced spacing betweenlower and upper metal layers 114, 116 due to direct contact between thetop electrode 104 and upper metal layer 116, without an intervening via,and may also be amenable to streamlined manufacturing techniques.

Notably, rather than a contact or via coupling the top electrode 104 toan overlying metal layer 116, the top electrode 104 itself is in directelectrical contact with the overlying metal layer 116. In someembodiments, the overlying metal layer 116 is a metal line or metallayer jumper. In some embodiments, a bottom surface of the overlyingmetal layer 116 meets at a planar interface with a top surface 104 a ofthe top electrode 104 and also portion of a top surface 126 a of thesidewall spacer 126. Because there is no via or contact between the topelectrode 104 and the overlying metal layer 116, the overall height ofthe MRAM cell 100 is more easily compatible with back-end-of-line (BEOL)process flows.

FIG. 2 illustrates a cross sectional view of some embodiments of anintegrated circuit 200, which includes MRAM cells 202 a, 202 b disposedin an interconnect structure 204 of the integrated circuit 200. Theintegrated circuit 200 includes a substrate 206. The substrate 206 maybe, for example, a bulk substrate (e.g., a bulk silicon substrate) or asilicon-on-insulator (SOI) substrate. The illustrated embodiment depictsone or more shallow trench isolation (STI) regions 208, which mayinclude a dielectric-filled trench within the substrate 206.

Two word line transistors 210, 212 are disposed between the STI regions208. The word line transistors 210, 212 include word line gateelectrodes 214, 216, respectively; word line gate dielectrics 218, 220,respectively; word line sidewall spacers 222; and source/drain regions224. The source/drain regions 224 are disposed within the substrate 206between the word line gate electrodes 214, 216 and the STI regions 208,and are doped to have a first conductivity type which is opposite asecond conductivity type of a channel region under the gate dielectrics218, 220, respectively. The word line gate electrodes 214, 216 may be,for example, doped polysilicon or a metal, such as aluminum, copper, orcombinations thereof. The word line gate dielectrics 218, 220 may be,for example, an oxide, such as silicon dioxide, or a high-κ dielectricmaterial. The word line sidewall spacers 222 can be made of siliconnitride (e.g., Si₃N₄), for example.

The interconnect structure 204 is arranged over the substrate 206 andcouples devices (e.g., transistors 210, 212) to one another. Theinterconnect structure 204 includes a plurality of IMD layers 226, 228,230, and a plurality of metallization layers 232, 234, 236 which arelayered over one another in alternating fashion. The IMD layers 226,228, 230 may be made, for example, of a low κ dielectric, such asun-doped silicate glass, or an oxide, such as silicon dioxide, or anextreme low κ dielectric layer. The metallization layers 232, 234, 236include metal lines 238, 240, 241, 242, which are formed withintrenches, and which may be made of a metal, such as copper or aluminum.Contacts 244 extend from the bottom metallization layer 232 to thesource/drain regions 224 and/or gate electrodes 214, 216; and vias 246extend between the metallization layers 232, 234, 236. The contacts 244and the vias 246 extend through dielectric-protection layers 250, 252(which can be made of dielectric material and can act as etch stoplayers during manufacturing). The dielectric-protection layers 250, 252may be made of an extreme low-κ dielectric material, such as SiC, forexample. The contacts 244 and the vias 246, 248 may be made of a metal,such as copper or tungsten, for example.

MRAM cells 202 a, 202 b, which are configured to store respective datastates, are arranged within the interconnect structure 204 betweenneighboring metal layers. The MRAM cell 202 a includes a bottomelectrode 254 and a top electrode 256, which are made of conductivematerial. Between its top and bottom electrodes 256, 254, MRAM cell 202a includes an MTJ 258. MRAM cell 202 a also includes a sidewall spacer260. The metal line 242 has a lowermost surface that is co-planar withand in direct electrical contact with (e.g., ohmically coupled to) a topsurface of top electrode 256 and portion of a top surface of thesidewall spacer 260.

FIG. 3 depicts some embodiments of a top view of FIG. 2's integratedcircuit 200 as indicated in the cut-away lines shown in FIGS. 2-3. Ascan be seen, the MRAM cells 202 a, 202 b can have a square, rectangular,or circular shape when viewed from above in some embodiments. In otherembodiments, however, for example due to practicalities of many etchprocesses, the corners of the illustrated square shape can becomerounded, resulting in MRAM cells 202 a, 202 b having a square orrectangular shape with rounded corners, or having a circular or ovalshape. The MRAM cells 202 a, 202 b are arranged over metal lines 240,241, respectively, and have top electrodes 256 in direct electricalconnection with the metal lines 242, respectively, without vias orcontacts there between.

Referring now to FIG. 4, an enlarged cross-sectional view of FIG. 2'sMRAM cell 202 a is provided. As shown, the MRAM cell 202 a includesbottom electrode 254 and top electrode 256 with MTJ 258 disposed betweenthe bottom electrode 254 and top electrode 256. The bottom electrode 254extends downwardly through in an opening in the dielectric-protectionlayer 252 to make electrical contact with underlying metal line 240.

In the illustrated embodiment, the MTJ 258 includes a lowerferromagnetic electrode 266 (which can have a pinned magneticorientation) and an upper ferromagnetic electrode 268 (which can have afree magnetic orientation). A tunneling barrier layer 270 is disposedbetween the lower and upper ferromagnetic electrodes 266, 268; and acapping layer 272 is disposed over the upper ferromagnetic electrode268. The lower ferromagnetic electrode 266 can be a syntheticanti-ferromagnetic (SAF) structure that includes a top pinnedferromagnetic layer 274, a bottom pinned ferromagnetic layer 276, and ametal layer 278 sandwiched between the top and bottom pinnedferromagnetic layers 274, 276.

In some embodiments, the upper ferromagnetic electrode 268 comprises Fe,Co, Ni, FeCo, CoNi, CoFeB, FeB, FePt, FePd, or the like. In someembodiments, the capping layer 272 comprises WO₂, NiO, MgO, Al₂O₃,Ta₂O₅, MoO₂, TiO₂, GdO, Al, Mg, Ta, Ru, or the like. In someembodiments, the tunneling barrier layer 270 provides electricalisolation between the upper ferromagnetic electrode 268 and the lowerferromagnetic electrode 266, while still allowing electrons to tunnelthrough the tunneling barrier layer 270 under proper conditions. Thetunneling barrier layer 270 may comprise, for example, magnesium oxide(MgO), aluminum oxide (e.g., Al₂O₃), NiO, GdO, Ta₂O₅, MoO₂, TiO₂, WO₂,or the like.

In operation, the variable magnetic polarity of the upper (e.g., free)ferromagnetic electrode 268 is typically read by measuring theresistance of the MTJ 258. Due to the magnetic tunnel effect, theresistance of the MTJ 258 changes with the variable magnetic polarity.Further, in operation, the variable magnetic polarity is typicallychanged or toggled using the spin-transfer torque (STT) effect.According to the STT effect, current is passed across the MTJ 258 toinduce a flow of electrons from the lower (e.g., pinned) ferromagneticelectrode 266 to the upper (e.g., free) ferromagnetic electrode 268. Aselectrons pass through the lower ferromagnetic electrode 266, the spinsof the electrons are polarized. When the spin-polarized electrons reachthe upper ferromagnetic electrode 268, the spin-polarized electronsapply a torque to the variable magnetic polarity and toggle the state ofthe free ferromagnetic electrode (e.g., upper electrode 268).Alternative approaches to reading or changing the variable magneticpolarity are also amenable. For example, in some alternate approachesmagnetization polarities of the pinned and/or free ferromagneticelectrodes 266/268 are perpendicular to an interface between thetunneling barrier layer 270 and the pinned and/or free ferromagneticelectrode 266/268, making the MTJ 258 a perpendicular MTJ.

In the illustrated embodiment, because the top electrode 256 itself (aswell as a portion of the sidewall spacer 260) is in direct contact withthe overlying metal line 242, the overall height of the MRAM cells 202a, 202 b can be reduced relative to previous approaches. This reducedheight makes the MRAM cells 202 a, 202 b more easily compatible withBEOL process flows. Thus, formation of MRAM cells 202 a, 202 b providesbetter MRAM operations with reduced manufacturing cost. Further, becausea bottom surface of the metal line is not as wide as the top surface ofthe spacer 260 the possibility of the metal line shorting to the bottomelectrode 254 is reduced.

With reference to FIGS. 5 through 11, cross-sectional views of someembodiments of a semiconductor structure having an MRAM cell at variousstages of manufacture are provided. Although FIGS. 5 through 20 aredescribed as a series of acts, it will be appreciated that these actsare not limiting in that the order of the acts can be altered in otherembodiments, and the methods disclosed are also applicable to otherstructures. In other embodiments, some acts that are illustrated and/ordescribed may be omitted in whole or in part.

FIG. 5 illustrates a cross-sectional view of some embodimentsillustrating a portion of an interconnect structure 204 disposed over asubstrate (not shown in FIG. 5, but previously shown in FIG. 2). Theinterconnect structure 204 includes an IMD layer 228 and a metal line240 which extends horizontally through the IMD layer 228. The IMD layer228 can be an oxide, such as silicon dioxide, a low-κ dielectricmaterial, or an extreme low-κ dielectric material. The metal line 240can be made of a metal, such as aluminum, copper, or combinationsthereof. In some embodiments, the substrate can be a bulk siliconsubstrate or a semiconductor-on-insulator (SOI) substrate (e.g., siliconon insulator substrate). The substrate can also be a binarysemiconductor substrate (e.g., GaAs), a tertiary semiconductor substrate(e.g., AlGaAs), or a higher order semiconductor substrate, for example.In many instances, the substrate manifests as a semiconductor wafer, andcan have a diameter of 1-inch (25 mm); 2-inch (51 mm); 3-inch (76 mm);4-inch (100 mm); 5-inch (130 mm) or 125 mm (4.9 inch); 150 mm (5.9 inch,usually referred to as “6 inch”); 200 mm (7.9 inch, usually referred toas “8 inch”); 300 mm (11.8 inch, usually referred to as “12 inch”); 450mm (17.7 inch, usually referred to as “18 inch”); for example. Afterprocessing is completed, for example after MRAM cells are formed, such awafer can optionally be stacked with other wafers or die, and is thensingulated into individual die which correspond to individual ICs.

A first dielectric-protection layer 252 is formed over IMD layer 228 andover metal line 240. In some embodiments, the firstdielectric-protection layer 252 comprises SiC (silicon carbide) having athickness of approximately 250 Angstroms. A second dielectric-protectionlayer 253 is formed over the first dielectric protection layer 252. Insome embodiments, the second dielectric-protection layer has a differentchemical composition than the first dielectric-protection layer 252, andcan for example comprise SRO (silicon-rich oxide) having a thickness ofapproximately 200 Angstroms. A bottom electrode layer 254 is formed overthe dielectric-protection layers 252, 253, and extends downwardlythrough an opening in the dielectric protection layers 252, 253 to makeelectrical contact with an upper portion of the metal line 240. Thebottom electrode layer 254 may be a conductive material, such as, forexample, titanium nitride, tantalum nitride, titanium, tantalum, or acombination of one or more of the foregoing. Further, the bottomelectrode layer 254 may be, for example, about 10-100 nanometers thickin some embodiments.

A magnetic tunneling junction (MTJ) stack 258 is formed over an uppersurface of the bottom electrode layer 254, and a top electrode layer 256is formed over the MTJ stack 258. The top electrode layer 256 may be aconductive material, such as, for example, titanium nitride, tantalumnitride, titanium, tantalum, tungsten, or a combination of one or moreof the foregoing. Further, the top electrode layer 256 may be, forexample, about 10-100 nanometers thick. A mask 502 is disposed over anupper surface of the top electrode layer 256. In some embodiments, themask 502 includes a photoresist mask, but can also be a hardmask such asa nitride mark. In some embodiments, the mask 502 may be may be adifferent conductive material as compared to the top electrode layer256, such as, for example, titanium nitride, tantalum nitride, titanium,tantalum, or a combination of one or more of the foregoing. Sidewalls ofthe MTJ 258 and/or top electrode 256 can be angled at an angle of otherthan 90-degrees as measured relative to a normal line passing through anupper surface of the bottom electrode 254.

A sidewall spacer precursor layer 260′ is formed over lateral portionsof the bottom electrode 254, sidewalls of the MTJ 258, sidewalls of thetop electrode 256, and extending over sidewalls and upper surface of themask 502. In some embodiments, the sidewall spacer precursor layer 260′may be formed by any suitable deposition technique and is typicallyformed conformally. Further, the sidewall spacer precursor layer 260′may be formed of, for example, silicon nitride, silicon carbide, Si₃N₄,SiON, or a combination of one or more of the foregoing. Even more, thesidewall spacer precursor layer 260′ may be formed with a thickness of,for example, about 150-600 Angstroms. A dielectric liner 602, such as aconformal oxide, is then formed over the sidewall spacer precursor layer260′. The dielectric liner 602 facilitates the spacer etching processperformed in FIG. 6.

In FIG. 6, a spacer etching process 600 (e.g., anisotropic etch) hasbeen performed into the sidewall spacer precursor layer 260′ to etchsidewall spacer precursor layer 260′ back to remove lateral stretches ofthe sidewall spacer precursor layer 260′ and the top electrode masklayer 502 to expose a top surface 256 of the top electrode 256surrounded by the remaining sidewall spacer 260. In some embodiments,after etching a sidewall spacer top surface and the electrode topsurface have a combined width that is significantly wider than theexpected width of a metal well or trench that will be formed in FIG. 10to create the metal line (e.g., greater than 154 nm). Thus, in someembodiments, the width of the sidewall spacer is selected based on thewidth of the metal line to which the top electrode will be connected. Inaddition, the spacer etching process cuts the bottom electrode 254 toits final dimension. In some embodiments, this spacer etch 600 is aunidirectional or vertical etch.

In FIG. 7, an etch stop layer is deposited to create a first portion ofthe stop layer 142 a covering the electrode top surface and the spacertop surface. An additional portion 142 b of the etch stop layer, whichmay be discontinuous with respect to the first portion 142 a, abuts aperiphery of the bottom electrode 254. This discontinuity in the stoplayer is due to the step-like coverage characteristic of the stop layermaterial (e.g., silicon nitride, silicon carbide, Si₃N₄, SiON, orcombinations thereof) which does not typically deposit on the lateralsurface of the MTJ. Further, the first portion 142 a overhangs thespacer top surface and, in some embodiments exhibits the beret shape,illustrated in FIG. 1B to provide additional lateral protection againstunintentional etching beyond the spacer top surface.

In FIG. 8 a protective layer 230, such as a silicon oxynitride (SiON)layer or an extreme low-k dielectric layer, is then formed over the etchstop layer 142, for example, by chemical vapor deposition (CVD), plasmavapor deposition (PVD), spin on techniques, or thermal oxidation, forexample. The protective layer 230 electrically isolates the MRAM cellfrom other active circuits and provides mechanical and chemicalprotection to the MRAM cell. In some embodiments, a top surface of theprotective layer 230 is approximately 1080 Angstroms above a surface ofthe second dielectric-protection layer 253. In some embodiments,chemical mechanical planarization (CMP) is then performed on theprotective layer 230 to planarize an upper surface of the protectivelayer 230. After the CMP, a photomask (not shown) is formed over theprotective layer 230, and an etch is carried out so the protective layer230 covers the memory array region and not the periphery region, asshown in FIG. 8.

Next an IMD or ILD layer 801 made of dielectric material, such as anoxide or ELK dielectric is applied on top of the protective layer 230 inthe memory array region and on top of the second dielectric-protectionlayer 253 in the periphery region. In some embodiments, the IMD or ILDlayer 801 has a thickness of approximately 400 Angstroms in the memoryarray region and approximately 1700 Angstroms in the periphery region.An etch stop layer 803 is deposited on the IMD or ILD layer 801. In someembodiments, the etch stop layer 803 comprisestetra-ethyl-ortho-silicate (TEOS). A nitrogen free anti-reflection layer(NFARL) 805 is applied on top of the etch stop layer 803. In someembodiments, the NFARL 805 is approximately 200 Angstroms thick. A hardmask layer 807 is applied onto the NFARL 805. Photolithography is usedto pattern the hard mask layer 807 with trench openings that will beused in a dual damascene process to form trenches or openings that willhold a top metal layer. In some embodiments, these openings can bedual-damascene openings. In some embodiments, the hard mask layer 807comprises titanium nitride (TiN) and is approximately 350 Angstromsthick.

In FIG. 9, a photoresist layer 909 is applied over the hard mask layer807. A first trench 915 is etched in the periphery region.

In FIG. 10, the photoresist layer 909 has been removed. One or moreetches is then performed to form trench openings 242′ and 243′. In someembodiments, the one or more etches comprise a dual damascene process.

In FIG. 11, metal, such as aluminum or copper is used to fill thetrenches and openings. Thus, in a memory array region, the trench isfilled with a metal line 242 having a bottom surface which is in directcontact with the top surface of the top electrode 256, thereby providingan ohmic connection without a contact or via between the metal line 242and top electrode 256. The bottom surface of the metal line is also incontact with a portion of the stop layer 142 a, which reduces the riskof metal overflow beyond the MRAM cell. In some embodiments, the bottomsurface of the metal line is in contact with less than an entirety ofthe stop layer. A CMP operation is then performed (as indicated by thedashed line) to planarize an upper surface of the metal lines and anupper surface of the dielectric-protection layer 801, thus resulting inthe structure of FIGS. 1A and/or 4.

In another region of the integrated circuit, such as in the peripheryregion where CMOS logic devices are formed, a metal line 242 is coupledto an underlying metal line 240 through a via 243. As compared to thedirect connection between the metal line 242 and the top electrode 256,the interposition of the via 243 between the metal layer 242 and theunderlying metal line 240 consumes similar space in the verticaldirection as the MRAM cell. Thus, the direct connection between themetal line 242 and top electrode 256 in the memory array region allowsfor a reduced cell height in the memory array region so that the cellheight in the memory array region is similar to the cell height in theperiphery region.

FIG. 12 illustrates a methodology 1200 of forming an MRAM cell having anetch stop layer of sufficient width to protect against unintentionaletching beyond the sidewall spacer in accordance with some embodiments.Although this method and other methods illustrated and/or describedherein are illustrated as a series of acts or events, it will beappreciated that the present disclosure is not limited to theillustrated ordering or acts. Thus, in some embodiments, the acts may becarried out in different orders than illustrated, and/or may be carriedout concurrently. Further, in some embodiments, the illustrated acts orevents may be subdivided into multiple acts or events, which may becarried out at separate times or concurrently with other acts orsub-acts. In some embodiments, some illustrated acts or events may beomitted, and other un-illustrated acts or events may be included.

Acts 1202 through 1208 can correspond, for example, to the structurepreviously illustrated in FIG. 5 in some embodiments. At 1202, an etchstop layer is formed over an upper surface of a dielectric layer. Theetch stop layer exhibits an opening that leaves at least a portion of anupper surface of an underlying metal line exposed. At 1204, a bottomelectrode layer is formed over the etch stop layer. The bottom electrodelayer extends downward through the opening to make physical andelectrical contact with the underlying metal layer. At 1206, a magnetictunnel junction (MTJ) layer is formed over the bottom electrode layer.At 1208, a top electrode layer is formed over the magnetic tunneljunction layer. At 1210, which can correspond to the example previouslyillustrated in FIG. 5, a wide spacer layer surrounding at least the MTJlayer and the top electrode is formed. The wide spacer layer issufficiently wide to support an etch stop layer that protects againstunintentional etching beyond a top surface of the spacer. At 1212, whichcan correspond to the example previously illustrated in FIG. 6, thespacer layer is etched to expose a top surface of the top electrode anda top surface of the spacer. At 1213, which can correspond to theexample previously illustrated in FIG. 7, an etch stop layer that coversthe top surface of the top electrode and the top surface of the spaceris formed. The etch stop layer overhangs an outer periphery of the topsurface of the spacer. At 1214, which can correspond to the examplepreviously illustrated in FIG. 11, an upper metal layer is formed to bein direct physical contact and electrical contact with the electrode topsurface and the spacer top surface.

Some embodiments relate to an integrated circuit including amagnetoresistive random-access memory (MRAM) cell. The integratedcircuit includes a semiconductor substrate and an interconnect structuredisposed over the semiconductor substrate. The interconnect structureincludes a plurality of dielectric layers and a plurality of metallayers that are stacked over one another in alternating fashion. Theplurality of metal layers includes a lower metal layer and an uppermetal layer disposed over the lower metal layer. A bottom electrode isdisposed over and in electrical contact with the lower metal layer. Amagnetic tunneling junction (MTJ) is disposed over an upper surface ofthe bottom electrode. A top electrode is disposed over an upper surfaceof the MTJ and has an electrode top surface in direct electrical contactwith the upper metal layer. A sidewall spacer surrounds an outerperiphery of the top electrode and has a spacer top surface. An etchstop layer is disposed on top of an outer periphery of the spacer topsurface and surrounding an outer periphery of the bottom surface of theupper metal layer. The etch stop layer overhangs the outer periphery ofthe spacer top surface.

Other embodiments relate to an MRAM cell disposed on a semiconductorsubstrate. The MRAM cell includes a bottom electrode disposed over thesemiconductor substrate, and a magnetic tunneling junction (MTJ)disposed the bottom electrode. A top electrode is disposed over an uppersurface of the MTJ, wherein the top electrode has an electrode topsurface. A sidewall spacer surrounds an outer periphery of the topelectrode, wherein the spacer has a spacer top surface. A metal line isdisposed over the top electrode and has a bottom surface in directphysical and electrical contact with the electrode top surface and atleast a portion of the spacer top surface.

Other embodiments relate to a method for manufacturing an MRAM cell. Inthis method an etch stop layer is formed over an upper surface of adielectric layer, wherein the etch stop layer exhibits an opening thatleaves at least a portion of an upper surface of an underlying metalline exposed. A bottom electrode layer is formed over the etch stoplayer. The bottom electrode layer extends downward through the openingto physically and electrically connect to the underlying metal line. Amagnetic tunnel junction (MTJ) layer is formed over the bottom electrodelayer. A top electrode is formed over the magnetic tunnel junctionlayer. A spacer layer is formed surrounding at least the MTJ layer andthe top electrode. The spacer layer is etched to expose a top surface ofthe top electrode and a top surface of the spacer. An upper metal layeris formed in direct electrical and physical contact with electrode topsurface and the spacer top surface.

It will be appreciated that in this written description, as well as inthe claims below, the terms “first”, “second”, “second”, “third” etc.are merely generic identifiers used for ease of description todistinguish between different elements of a figure or a series offigures. In and of themselves, these terms do not imply any temporalordering or structural proximity for these elements, and are notintended to be descriptive of corresponding elements in differentillustrated embodiments and/or un-illustrated embodiments. For example,“a first dielectric layer” described in connection with a first figuremay not necessarily correspond to a “first dielectric layer” describedin connection with another figure, and may not necessarily correspond toa “first dielectric layer” in an un-illustrated embodiment.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. An integrated circuit, comprising: a semiconductor substrate; aninterconnect structure disposed over the semiconductor substrate, andincluding a plurality of dielectric layers and a plurality of metallayers stacked over one another in alternating fashion, wherein theplurality of metal layers include a lower metal layer and an upper metallayer disposed over the lower metal layer; a bottom electrode disposedover and in electrical contact with the lower metal layer; a magnetictunneling junction (MTJ) disposed over an upper surface of the bottomelectrode; a top electrode disposed over an upper surface of the MTJ,wherein the top electrode has an electrode top surface in directelectrical contact with a bottom surface of the upper metal layer; asidewall spacer surrounding an outer periphery of the top electrode,wherein the sidewall spacer has a spacer top surface; an etch stop layerdisposed on top of an outer periphery of the sidewall spacer top surfaceand surrounding an outer periphery of the bottom surface of the uppermetal layer; and further wherein the etch stop layer includes a lateralextension that overhangs the outer periphery of the sidewall spacer topsurface.
 2. The integrated circuit of claim 1, wherein the bottomsurface of the upper metal layer is in contact with the top spacersurface.
 3. The integrated circuit of claim 1, wherein a width of thebottom surface is less than a width of the top spacer surface.
 4. Theintegrated circuit of claim 1, wherein the MTJ has sidewalls that areangled at an angle of other than 90-degrees as measured relative to anormal line passing through an upper surface of the bottom electrode. 5.The integrated circuit of claim 1, wherein a portion of the etch stoplayer that extends beyond the outer periphery of the spacer top surfaceangles slightly down toward the bottom metal layer.
 6. The integratedcircuit of claim 1, further comprising an additional portion of the etchstop layer disposed at an outer periphery of the bottom electrode.
 7. Amagnetoresistive random-access memory (MRAM) cell disposed on asemiconductor substrate, the MRAM cell including: a bottom electrodedisposed over the semiconductor substrate; a magnetic tunneling junction(MTJ) disposed above the bottom electrode; a top electrode disposed overan upper surface of the MTJ, wherein the top electrode has an electrodetop surface; a sidewall spacer surrounding an outer periphery of the topelectrode, wherein the sidewall spacer has a spacer top surface; an etchstop layer disposed on top of an outer periphery of the spacer topsurface, wherein the etch stop layer overhangs the outer periphery ofthe spacer top surface; and a metal line disposed over the top electrodeand having a bottom surface in direct physical and electrical contactwith the electrode top surface.
 8. The MRAM cell of claim 7, wherein thebottom surface of the metal line is in contact with the top spacersurface.
 9. The MRAM cell of claim 7, wherein the MTJ has sidewalls thatare angled at an angle of other than 90-degrees as measured relative toa normal line passing through an upper surface of the bottom electrode.10. The MRAM cell of claim 7, wherein a width of the bottom surface ofthe metal line is less than a width of the top spacer surface.
 11. TheMRAM cell of claim 7, wherein a portion of the etch stop layer thatextends beyond the outer periphery of the spacer top surface anglesslightly down toward the bottom electrode.
 12. The MRAM cell of claim 7,further comprising an additional portion of the etch stop layer disposedat an outer periphery of the bottom electrode. 13-20. (canceled)
 21. Amemory cell, comprising: a top electrode disposed over an upper surfaceof a magnetic tunneling junction (MTJ), wherein the top electrode has anelectrode top surface; a sidewall spacer surrounding an outer peripheryof the top electrode, wherein the sidewall spacer has a spacer topsurface; an etch stop layer disposed on top of an outer periphery of thespacer top surface, wherein the etch stop layer overhangs the outerperiphery of the spacer top surface; and a metal line disposed over thetop electrode and having a bottom surface in direct physical andelectrical contact with the electrode top surface.
 22. The memory cellof claim 21, wherein the bottom surface of the metal line is in contactwith the top spacer surface.
 23. The memory cell of claim 21, wherein awidth of the bottom surface of the metal line is less than a width ofthe top spacer surface.
 24. The memory cell of claim 21, furthercomprising a bottom electrode disposed below the MTJ.
 25. The memorycell of claim 24, wherein the MTJ has sidewalls that are angled at anangle of other than 90-degrees as measured relative to a normal linepassing through an upper surface of the bottom electrode.
 26. The memorycell of claim 24, wherein a portion of the etch stop layer that extendsbeyond the outer periphery of the spacer top surface angles slightlydown toward the bottom electrode.
 27. The memory cell of claim 24,further comprising an additional portion of the etch stop layer disposedat an outer periphery of the bottom electrode.
 28. The memory cell ofclaim 24, wherein the etch stop layer includes a lateral extension thatoverhangs the outer periphery of the sidewall spacer top surface.